Committees †

Committee Members †

Organizing Committee †

• Y. Arakawa (Univ. of Tokyo, Japan) , chair
• K. Kyuma (Mitsubishi Electric, Japan) , vice chair
• H. Ohno (Tohoku Univ., Japan) , vice chair

• S. Arai (Tokyo Inst. of Tech., Japan)
• H. Asahi (Osaka Univ., Japan)
• T. Fukui (Hokkaido Univ., Japan)
• Y. Itaya (NTT, Japan)
• K. Kamijo (Oki Electric, Japan)
• T. Katsuyama (Sumitomo Electric, Japan)
• K. Kishino (Sophia Univ., Japan)
• A. Kurobe (TOSHIBA, Japan)
• Y. Matsushima (NICT, Japan)
• T. Mizutani (Nagoya Univ., Japan)
• K. Onabe (Univ. of Tokyo, Japan)
• T. Onai (HITACHI, Japan)
• J. Sone (NEC, Japan)
• M. Taneya (SHARP, Japan)
• M. Watanabe (AIST, Japan)
• N. Yokoyama (Fujitsu Labs., Japan)

Steering Committee †

• Y. Arakawa (Univ. of Tokyo, Japan) , chair
• S. Fujita (Kyoto Univ., Japan) , vice chair
• K. Hirakawa (Univ. of Tokyo, Japan) , vice chair
• T. Takahashi (Univ. of Tokyo, Japan) , secretary
• S. Iwamoto (Univ. of Tokyo, Japan) , secretary

• M. Aoki (HITACH, Japan)
• T. Arakawa (Yokohama National Univ., Japan)
• A. Yamada (Tokyo Inst. of Technol., Japan)
• T. Yamamoto (Fujitsu, Japan)

Program Committee †

• Y. Hirayama (Tohoku Univ., Japan) , chair
• H. Amano (Meijo Univ., Japan) , vice chair
• S. Noda (Kyoto Univ., Japan) , vice chair
• H. Yamaguchi (NTT, Japan) , vice chair
• T. Sogawa (NTT, Japan) , secretary
• K. Uno (Wakayama Univ., Japan) , secretary

Subcommittee †

1. Growth and Nanostructure Formation
   • J. Motohisa (Hokkaido Univ., Japan) , subcommittee chair
   • H. Asahi (Osaka Univ., Japan)
   • L. Samuelson (Lund Univ., Sweden)
   • O.G. Schmidt (Max Planck Inst., Germany)
   • I. Suemune (Hokkaido Univ., Japan)
   • M. Sugawara (Fujitsu Lab., Japan)
   • T. Sugaya (AIST, Japan)
   • C. Tu (UCSD, USA)
   • K. Yamaguchi (Univ. of Electro Commun., Japan)
2. Transport Devices
   • Y. Miyamoto (Tokyo Inst. of Technol., Japan) , subcommittee chair
   • E.Y. Chang (National Chiao Tung Univ., Taiwan)
   • N. Hara (Fujitsu Lab., Japan)
   • M. Higashiwaki (NICT, Japan)
   • K. Maezawa (Univ. of Toyama, Japan)
   • M. Rodwell (UCSB, USA)
   • L.E. Wernersson (Lund Univ., Sweden)
3. Photonic Devices
   • T. Baba (Yokohama National Univ., Japan) , subcommittee chair
   • T. Asano (Kyoto Univ., Japan)
   • M. Hangyo (Osaka Univ., Japan)
   • L.K. Kuipers (AMOLF, Netherlands)
   • T. Miyamoto (Tokyo Inst. of Technol., Japan)
   • M. Notomi (NTT, Japan)
   • O. Painter (California Inst. of Technol., USA)
   • H.Y. Ryu (Samsung, Korea)
4. Physics
   • S. Tarucha (Univ. of Tokyo, Japan) , subcommittee chair
   • G. Abstreiter (TU Muenchen, Germany)
   • D. Bimberg (TU Berlin, Germany)
   • T. Fujisawa (NTT, Japan)
   • S. Katsumoto (Univ. of Tokyo, Japan)
   • C. Marcus (Harvard Univ., USA)
   • A. Sawada (Kyoto Univ., Japan)
   • G. Solomon (NIST, USA)
5. Spintronics
   • H. Munekata (Tokyo Inst. of Technol., Japan) , subcommittee chair
   • H. Akinaga (AIST, Japan)
   • J. K. Frudyna (Univ. of Notre Dame, USA)
   • S.H. Lee (Korea Univ., Korea)
   • S.J. Lee (Dongguk Univ., Korea)
   • Y. Ohno (Tohoku Univ., Japan)
   • P. V. Santos (Paul Drude Institute, Germany)
   • M. Tanaka (Univ. of Tokyo, Japan)
6. Characterization, Nanoprobe and Nanomechanics
   • J. Yoshino (Tokyo Inst. of Technol., Japan) , sucommittee chair
   • Jen-Inn Chyi (National Central University, Taiwan)
   • R. Hogg (Univ. of Sheffield, UK)
   • T. Kita (Kobe Univ., Japan)
   • H. Kosaka (Tohoku Univ., Japan)
   • K. Shiraishi (Univ. of Tsukuba, Japan)
   • S. Tsukamoto (Univ. of Tokyo, Japan)
7. GaN and Related Semiconductors
   • K. Matsumoto (Taiyo Nippon Sanso, Japan) , subcommittee chair
   • S. Chichibu (Tohoku Univ., Japan)
   • S. Kamiyama (Meijo Univ., Japan)
   • T. Kikkawa (Fujitsu Lab., Japan)
   • A. Kikuchi (Sophia Univ., Japan)
   • Y. Kobayashi (NTT, Japan)
   • M. Kondow (Osaka Univ., Japan)
   • U. Mishra (UCSB, USA)
   • T. Miyajima (SONY, Japan)
   • H. Miyake (Mie Univ., Japan)
   • E. Yoon (Seoul National Univ., Korea)
8. Oxide Semiconductors
   • M. Kawasaki (Tohoku Univ., Japan) , subcommittee chair
   • T. Kamiya (Tokyo Inst. of Technol., Japan)
   • D. Norton (Florida Univ., USA)
   • S.J. Park (Gwangju Inst. Sci. Tech., Korea)
   • D. Rogers (Nanovation SARL, France)
9. SiGe and Related Semiconductors
   • S. Takagi (Univ. of Tokyo, Japan) , subcommittee chair
   • S. Fukatsu (Univ. of Tokyo, Japan)
   • J. Hoyt (MIT, USA)
   • S. Koester (IBM, USA)
   • C.W. Liu (National Taiwan Univ., Taiwan)
   • A. Sakai (Nagoya Univ., Japan)
10. Carbon Related Materials
    • K. Matsumoto (Osaka Univ., Japan) , subcommittee chair
    • J. Appenzeller (IBM, USA)
    • Y. Homma (Tokyo Univ. of Sci., Japan)
    • K. Ishibashi (RIKEN, Japan)
    • H. Kawarada (Waseda Univ., Japan)
    • Y. Kuk (Seoul National Univ., Korea)
    • S. Maruyama (Univ. of Tokyo, Japan)
    • T. Mizutani (Nagoya Univ., Japan)
11. Organic Semiconductors and Other Soft Materials
    • T. Tsutsui (Kyushu Univ., Japan) , subcommittee chair
    • C. Adachi (Kyushu Univ., Japan)
    • T. Kamata (AIST, Japan)
    • Y. Ohmori (Osaka Univ., Japan)
    • T. Someya (Univ. of Tokyo, Japan)